DIN EN 62047-25
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area (IEC 62047-25:2016); German version EN 62047-25:2016
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 25: Siliziumbasierte MEMS-Herstellungstechnologie - Messverfahren zur Zug-Druck- und Scherfestigkeit gebondeter Flächen im Mikrometerbereich (IEC 62047-25:2016); Deutsche Fassung EN 62047-25:2016
Overview
The main structural materials for MEMS, microcomponents and so on have special properties such as dimensions in the micrometer range, material manufacturing processes using layer deposition and photolithography and/or non-mechanical processing of micro-samples. The strength of the different structures is a decisive factor for the application. This part of DIN EN 62047 specifies the online test method for measuring the strength of bond surfaces in the micrometer range that are manufactured using microsystems technology processes used for silicon-based micro-electromechanical systems (MEMS). It is applicable for the online measurement of pull-press and shearing strength of micro bonding area manufactured using microelectronic or other microsystems technology processes. A micro-anchor (fixed-point bearing) connected to the substrate via the micro-bonded surface provides the mechanical attachment (bearing) for the moving functional sensor/actuator components in MEMS devices. In these devices, scaling effects, voids, contamination and mismatched thermal stresses result in dramatic degradation of the bond quality. Furthermore, under the premise that the test method for bond quality should be simple and practicable, this standard specifies the online test method for pull-press and shearing strength, which is based on a test structure. According to this standard, neither complicated measuring instruments (such as scanning electron microscopes or nanoindenters) nor special preparation techniques are required for the test structures. With this method, not only the bond quality can be reflected quantitatively, but also the strength of the entire microstructure. Since the test structure can be implanted into the component production as a standard analysis structure according to this procedure, this procedure can form a bridge by means of which the production factories (foundries) can provide certain quantitative references for the developer. The responsible committee is DKE/K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.
