DIN IEC/TS 62804-1
; VDE V 0126-37-1:2017-05
Photovoltaic (PV) modules - Test methods for the detection of potential-induced degradation - Part 1: Crystalline silicon (IEC/TS 62804-1:2015)
Photovoltaik(PV)-Module - Prüfverfahren für die Erkennung von spannungsinduzierter Degradation - Teil 1: Kristallines Silicium (IEC/TS 62804-1:2015)
Procedure
VN
Overview
This part of IEC 62804 defines procedures to test and evaluate the durability of crystalline silicon photovoltaic (PV) modules to the effects of short-term high-voltage stress including potential-induced degradation (PID). The two specified test methods are given as screening tests - neither test includes all the factors existing in the natural environment that can affect the PID rate. The methods describe how to achieve a constant stress level. The testing in this Technical Specification is designed for crystalline silicon PV modules with one or two glass surfaces, it is not intended to evaluate modules with thin film technologies, tandem or heterostructure cells. The actual durability of modules to system voltage stress will depend on the environmental conditions under which they are operated. These tests are intended to assess PV module sensitivity to PID irrespective of actual stresses under operation in different climates and systems. The responsible committee is DKE/K 373 "Photovoltaische Solarenergie-Systeme" ("Solar photovoltaic energy systems") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.
