Procedure

VN

Overview

Techniques for scanning near-fields radiated by integrated circuits and their surrounding environment allow pinpointing of areas of radiation which could potentially cause interference to nearby devices. The ability to associate magnetic or electric field strengths with a particular location on a device can provide valuable information for improvement of an integrated circuit both in terms of functionality and EMC performance. Near-field scan techniques have considerably evolved over recent years. The improved sensitivity, bandwidth and spatial resolution of the probes allow analysis of integrated circuits operating into the gigahertz range. The ability to measure radiation both in the frequency and time domain allows not only analysis of fields generated by an integrated circuit, but also fields generated by externally applied disturbances propagating through the device. Post-processing can considerably enhance the resolution of a near-field scan test bench and the measured data can be represented in many different ways, allowing the user to choose the method best suited to his requirements. This part of IEC 61967 provides a test procedure which defines a method for evaluating the near electric, magnetic or electromagnetic field components at or near the surface of an integrated circuit (IC). This diagnostic procedure is intended for IC architectural analysis such as floor planning and power distribution optimization. This test procedure is applicable to measurements from an IC mounted on any circuit board that is accessible to the scanning probe. In some cases it makes sense to not only scan the IC but also its environment. For comparison of surface scan emissions between different ICs, the standardized test board defined in IEC 61967-1 should be used. This measurement method provides a detailed pattern of the electric or magnetic near-field emissions of the IC. The resolution of the measurement is determined by the capability of the measurement probe and the precision of the probe positioning system. This method is intended for use up to 6 GHz. Extended frequency limits are possible with existing probe technology but are beyond the scope of this specification. The measurements may be carried out in the frequency domain or in the time domain. The responsible committee is DKE/K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.

Document: references other documents

Document: referenced in other documents

Responsible national committee

DKE/K 631 - Halbleiterbauelemente