DIN EN 62047-9
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 9: Prüfverfahren zur Festigkeit von Full-Wafer-Bondverbindungen in der Mikrosystemtechnik (MEMS) (IEC 62047-9:2011); Deutsche Fassung EN 62047-9:2011
Overview
The main structural materials for micro-electromechanical devices, micromachines, and so on, have special features, such as typical dimensions of a few microns, material fabrication by deposition, and test piece fabrication by means of non-mechanical machining, including photolithography. There are different ways to measure bonding strength such as visual test, pull test, double cantilever beam (DCB) test, electrostatic test, blister test, three-point bend test, and die shear test. These various ways are described in this standard for the use of micromechanical devices. Consequently, the bonding strength of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etcetera, can be tested in a uniform manner. Applicable structure sizes during MEMS processing/assembly are specified for the methods. The applicable wafer thickness is in the range of 10 µm to several millimetres. The responsible committee is K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.
