DIN EN 60749-29
Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test (IEC 60749-29:2011); German version EN 60749-29:2011
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 29: Latch-up-Prüfung (IEC 60749-29:2011); Deutsche Fassung EN 60749-29:2011
Overview
This part of IEC 60749 covers the I-test and the overvoltage latch-up testing of integrated circuits. This test method is primarily applicable to CMOS devices. Applicability to other technologies shall be established. This test is classified as destructive. The purpose of this test is to establish a method for determining integrated circuit (IC) latch-up characteristics and to define latch-up failure criteria. Latch-up characteristics are used in determining product reliability and minimizing "no trouble found" (NTF) and "electrical overstress" (EOS) failures due to latch-up. This standard replaces DIN EN 60749-29:2004-07. The following modifications have been made: a) Classification and levels have been incorporated in a new clause 3; b) incorporation of some minor technical modifications and adjustments; c) supplementation of a new informative annex with examples of special pins that are connected to passive components; d) supplementation of an informative annex on the calculation of operating ambient or operating case temperature for a given operating junction temperature. The responsible committee is K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.
