DIN EN 62374-1
Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (IEC 62374-1:2010); German version EN 62374-1:2010 + AC:2011
Halbleiterbauelemente - Teil 1: Prüfung auf zeitabhängigen dielektrischen Durchbruch (TDDB) bei Isolationsschichten zwischen metallischen Leiterbahnen (IEC 62374-1:2010); Deutsche Fassung EN 62374-1:2010 + AC:2011
Overview
The reliability of semiconductor devices which are increasingly installed in rough ambient conditions and perform essential - sometimes even safety-related - control functions is focused increasingly by equipment manufacturers because the devices are being constructed from structures which are getting finer and finer. This document specifies a test method, test structure and a test to estimate the lifetime of the time-dependent dielectric breakdown (TDDB) for inter-metal layers applied in semiconductor devices. The TDDB test can be both used for devices mounted in housings (package-level) and (uncapped) devices found on the wafer (wafer-level). The responsible Committee is K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.
