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IEC 47F/5/NP
Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for linear thermal expansion coefficients of MEMS materials (Future IEC 62047-11)
IEC 47F/38/NP
(Future IEC 62047-15): Semiconductor devices -Micro-electromechanical devices - Part 15: Test method for bond strength in PDMS/Glass chip
IEC 47F/39/NP
(Future IEC 62047-16): Semiconductor devices -Micro-electromechanical devices - Part 16: Test method forresidual stress measurement
IEC 47F/46/NP
(Future IEC 62047-17): Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method for measuring mechanical properties of thin films
IEC 47F/70/CDV
IEC 62047-14 Ed.1: Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
IEC 47F/95/NP
Future IEC 62047-21: Semiconductor devices - Micro-electromechanical devices Part 21: Test method for Poisson's ratio of thin film MEMS materials
IEC 47F/96/NP
Future IEC 62047-22: Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates
IEC 47F/106/NP
Future IEC 62047-15: Semiconductor devices Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass
IEC 47F/126/CD
IEC 62047-15 Ed.1: Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding quality between PDMS and glass
IEC 47F/127/CD
IEC 62047-21 Ed.1: Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
