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DIN EN ISO 21068-2
Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon – Part 2: Determination of volatile components, total carbon, free carbon, silicon carbide, total and free silicon, free and surface silica (ISO 21068-2:2024); German version EN ISO 21068-2:2024
DIN EN 63011-3
Integrated circuits - Three dimensional integrated circuits - Part 3: A model and measurement conditions of through silicon via (IEC 47A/997/CD:2016)
DIN EN ISO 21068-3
Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon – Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents (ISO 21068-3:2024); German version EN ISO 21068-3:2024
DIN EN ISO 21068-1
Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 1: General information, terminology and sample preparation (ISO 21068-1:2024); German version EN ISO 21068-1:2024
ISO/CD 18368
Implants for surgery - Nitride ceramic materials - Monolithic materials made of beta silicon-nitride
DIN EN ISO 21068-4
Chemical analysis of raw materials and refractory products containing silicon carbide, silicon nitride, silicon oxynitride and sialon – Part 4: XRD methods (ISO 21068 4:2024); German version EN ISO 21068 4:2024
prEN ISO 17947-1 rev
Fine ceramics (advanced ceramics, advanced technical ceramics) - Methods for chemical analysis of fine silicon nitride powders - Part 1: Wet chemical methods
DIN EN ISO 17947-1 rev
Fine ceramics (advanced ceramics, advanced technical ceramics) - Methods for chemical analysis of fine silicon nitride powders - Part 1: Wet chemical methods
DIN ISO 19694-6
Stationary source emissions - Determination of greenhouse gas emissions in energy-intensive industries - Part 6: Ferroalloys and silicon industry (ISO/DIS 19694-6:2021); Text in German and English
prEN 15991
Testing of ceramic raw materials and ceramic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry with electrothermal vaporisation (ETV-ICP-OES)