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OVE EN IEC 63275-1
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability (IEC 47/2679/CDV) (english version)
Edition
2021-04-01
24/30499092 DC
BS EN IEC 63601 Guideline for Evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion (Fast track)
Edition
2024-10-04
BS IEC 63275-1
Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Test method for bias temperature instability
Edition
2022-10-05
PD ISO/TS 4425
Genomics informatics. Data elements and their metadata for describing the microsatellite instability (MSI) information of clinical massive parallel DNA sequencing
Edition
2023-05-17
ASTM D 6748
Standard Test Method for Determination of Potential Instability of Middle Distillate Fuels Caused by the Presence of Phenalenes and Phenalenones (Rapid Method by Portable Spectrophotometer)
Edition
2022
EIA JEP 184
Guideline for evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion
Edition
2021-03
EIA JEP 195
Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion
Edition
2023-02
DIN EN 14917/A1
Metal bellows expansion joints for pressure applications; German and English version EN 14917:2021/prA1:2024
Edition
2024-11
DIN ISO 15767
Workplace atmospheres - Controlling and characterizing uncertainty in weighing collected aerosols (ISO 15767:2009)
Edition
2010-10
DIN 10235
Pepper an pepper oleoresins - Determination of piperine content - Method using high-performance liquid chromatography (HPLC)
Edition
1999-09