Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
Edition 2004-11-09

Nanomanufacturing. Key control characteristics. Two-dimensional materials. Carrier concentration: Field effect transistor method
Edition 2022-11-29

Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET). Fast BTI test for MOSFET
Edition 2023-03-30

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
Edition 2006-11-01

BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
Edition 2017-11-30

BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
Edition 2018-08-03

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
Edition 2010-09-01

Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Test method for bias temperature instability
Edition 2022-10-05

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability (IEC 47/2679/CDV) (english version)
Edition 2021-04-01