Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
Edition 1993-07-15

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
Edition 2007-01

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
Edition 2010-12

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
Edition 2006-08

Measurement of internal electric field in insulating materials - Pressure wave propagation method (IEC 62836:2024); German version EN IEC 62836:2024
Edition 2024-08

Electromagnetic compatibility (EMC) - Part 2-2: Environment - Compatibility levels for low-frequency conducted disturbances and signalling in public low-voltage power supply systems (IEC 61000-2-2:2002 + A1:2017 + A2:2018); German version EN 61000-2-2:2002 + A1:2017 + A2:2019
Edition 2020-05

Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films (IEC 62374:2007); German version EN 62374:2007
Edition 2008-02

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)
Edition 2007-03-01

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010) (german version)
Edition 2011-01-01

Electromagnetic compatibility (EMC) - Electromagnetic compatibility of equipment - Part 23: Limits for radiated susceptibility; Text in German and English
Edition 2021-05