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BS IEC 60747-7+A1
Semiconductor devices. Discrete devices. Bipolar transistors
Edition
2011-02-28
EIA JESD 24-6
Thermal Impedance Measurements for Insulated Gate Bipolar Transistors
Edition
1991-10
DIN EN 62751-2 ; VDE 0553-751-2:2024-07
Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters (IEC 62751-2:2014 + A1:2019 + AMD2:2023); German version EN 62751-2:2014 + A1:2019 + A2:2023
Edition
2024-07
EIA JESD 24-12
Thermal Impedance Measurement for Insulated Gate Bipolar Transistors (Delta VCE(on) Method)
Edition
2004-06
EIA JESD 24-4
Thermal Impedance Measurements for Bipolar Transistors (Delta Base- Emitter Voltage Method)
Edition
1990-11
ASTM E 1855
Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Edition
2020
DIN EN 60749-34
Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling (IEC 60749-34:2010); German version EN 60749-34:2010
Edition
2011-05
BS IEC 60747-9
Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Edition
2019-11-22
DIN EN 61360-4
Standard data element types with associated classification scheme for electric components - Part 4: IEC reference collection of standard data element types and component classes (IEC 61360-4:2005); German version EN 61360-4:2005, text in English
Edition
2005-11
DIN 4000-19
Tabular layouts of article characteristics for transistors and thyristors
Edition
1988-12