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NF B41-106 ; NF EN 15591:2016-02-13
Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)
Edition
2016-02-13
NF B49-401 ; NF ISO 16169:2018-12-21
Preparation of silicon carbide and similar materials for analysis by ISO 12677 X-ray fluorescence (XRF) - Fused cast-bead method
Edition
2018-12-21
NF B49-422-1 ; NF EN 12698-1:2008-05-01
Chemical analysis of nitride bonded silicon carbide refractories - Part 1: chemical methods
Edition
2008-05-01
NF B49-422-2 ; NF EN 12698-2:2008-04-01
Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods
Edition
2008-04-01
NF B49-423-1 ; NF EN ISO 21068-1:2024-05-15
Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 1: General information, terminology and sample preparation
Edition
2024-05-15
NF B49-423-2 ; NF EN ISO 21068-2:2024-06-19
Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 2: determination of volatile components, total carbon, free carbon, silicon carbide, total and free silicon, free and surface silica
Edition
2024-06-19
NF B49-423-3 ; NF EN ISO 21068-3:2024-06-19
Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 3: determination of nitrogen, oxygen and metallic and oxidic constituents
Edition
2024-06-19
NF B49-423-4 ; NF EN ISO 21068-4:2024-06-19
Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 4: XRD methods
Edition
2024-06-19
NF E75-236 ; NF ISO 9286:2021-12-17
Abrasive grains and crude - Chemical analysis of silicon carbide
Edition
2021-12-17
PR NF B41-106 ; PR NF EN 15991
Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)