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PR NF C96-284 ; PR NF EN IEC 63284
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
BS IEC 60747-4+A1
Semiconductor devices - Discrete devices - Microwave diodes and transistors
Edition
2008-02-29
OVE EN IEC 63284
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors (IEC 47/2681/CDV) (english version)
Edition
2021-04-01
OEVE/OENORM EN 62373
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)
Edition
2007-03-01
OVE EN IEC 63275-1
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability (IEC 47/2679/CDV) (english version)
Edition
2021-04-01
OVE EN IEC 63275-2
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)
Edition
2021-04-01
BS IEC 60747-8+A1
Semiconductor devices. Discrete devices. Field-effect transistors
Edition
2011-06-30
BS IEC 60747-8-4
Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
Edition
2004-11-09
EIA JEP 001-2A
FOUNDRY PROCESS QUALIFICATION GUIDELINES - FRONT END TRANSISTOR LEVEL (Wafer Fabrication Manufacturing Sites)
Edition
2018-09
JIS C 7030
Measuring methods for transistors
Edition
1993-02-28