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OVE EN IEC 63275-2
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)
Edition
2021-04-01
OVE EN 60904-11
Photovoltaic devices - Part 11: Measurement of light-induced degradation of crystalline silicon solar cells (IEC 82/1408/CDV) (english version)
Edition
2018-06-01
OVE EN 63011-3
Integrated circuits - Three dimensional integrated circuits - Part 3: A model and measurement conditions of Through Silicon Via (IEC 47A/1025/CDV) (english version)
Edition
2017-10-01
ABNT NBR ISO 9286
Abrasive grains and crude - Chemical analysis of silicon carbide
Edition
2014-11-06
ABNT NBR ISO 21068-1
Chemical analysis of silicon-carbide-containing raw materials and refractory products Part 1: General information and sample preparation
Edition
2016-01-25
ABNT NBR ISO 21068-2
Chemical analysis of silicon-carbide-containing raw materials and refractory products Part 2: Determination of lost on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon
Edition
2016-01-25
ABNT NBR ISO 21068-3
Chemical analysis of silicon-carbide-containing raw materials and refractory products Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents
Edition
2016-01-25
ABNT NBR 6643
Iron alloys - Determination of silicon, phosphorus, manganese, carbon and sulfur iron-manganese-silicon alloys
Edition
2016-09-14
ABNT NBR 6929
Iron alloys - Determination of silicon, calcium, aluminum, manganese and carbon in calcium-silicon alloys
Edition
2018-11-29
ABNT NBR 7548
Iron alloys - Determination of tungsten, silicon, iron, manganese, phosphorus and aluminum in iron-tungsten alloys
Edition
2018-12-07