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EIA JESD 28-1
N-Channel MOSFET Hot Carrier Data Analysis
Edition
2001-09
EIA JESD 60A
A Procedure for Measuring P-Channel MOSFET Hot-Carrier- Induced Degradation Under DC Stress
Edition
2004-09
EIA JESD 90
A Procedure for Measuring P-Channel MOSFET Negative Bias Temperature Instabilities
Edition
2004-11
23/30474926 DC
BS IEC 63505. Guidelines for measuring the threshold voltage (VT) of SiC MOSFETs
Edition
2023-06-06
EIA JESD 24-3
Thermal Impedance Measurements for Vertical Power MOSFETs (Delta Source-Drain Voltage Method)
Edition
1990-11
UNE-EN 62417
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
Edition
2010-09-01
EIA JEP 183A
Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs
Edition
2023-01
EIA JEP 187
Guidelines for Representing Switching Losses of SIC Mosfets in Datasheets
Edition
2021-12
EIA JEP 194
Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs
Edition
2023-02
BS IEC 60747-8-4
Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
Edition
2004-11-09