DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE
DIN EN 60749-23
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (IEC 60749-23:2004 + A1:2011); German version EN 60749-23:2004 + A1:2011
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 23: Lebensdauer bei hoher Temperatur (IEC 60749-23:2004 + A1:2011); Deutsche Fassung EN 60749-23:2004 + A1:2011
Overview
The DIN EN 60749 standard series contains various mechanical and climatic test methods for semiconductor devices. This test method is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard. The new edition of the DIN EN 60749-23 contains EN 60749-23:2004 and the amendments to this standard incorporated therein, according to EN 60749-23/A1. Therewith, the recommendations contained so far in Note 1 on additional requirements for stress for parts which are not tested within 96 h, have been incorporated as requirements in the text of the standard and specified in Table 1. The responsible Committee is K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.
