Technische Regel
[AKTUELL]
EIA JEP 184
EIA JEP 184
Guideline for evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion
Titel (englisch)
Guideline for evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion