NA 022
DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE
DIN EN 50178 ; VDE 0160:1998-04 [CURRENT] references following documents:
| Document number | Edition | Title |
|---|---|---|
| IEC 60747-5-3 | 1997-08 | Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods More |
| IEC 60747-5-3 AMD 1 | 2002-03 | Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices; Measuring methods; Amendment 1 More |
| IEC 60747-5-3 Edition 1.1 | 2009-11 | Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods More |
| IEC 60747-5-7 | 2016-02 | Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors More |
| IEC 60747-5-8 | 2019-11 | Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes More |
| IEC 60747-5-9 | 2019-12 | Semiconductor devices - Part 5-9: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence More |
| IEC 60747-6 | 2016-04 | Semiconductor devices - Part 6: Discrete devices - Thyristors More |
| IEC 60747-6-3 ; QC 750113:1993-11 | 1993-11 | Semiconductor devices; discrete devices; part 6: thyristors: section 3: blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A More |
| IEC 60747-7 | 2010-12 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors More |
| IEC 60747-7 AMD 1 | 2019-09 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors; Amendment 1 More |
