NA 022
DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE
DIN EN 61287-1 ; VDE 0115-410:2014-12 [CURRENT] references following documents:
| Document number | Edition | Title |
|---|---|---|
| IEC 60747-5-1 AMD 2 | 2002-03 | Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices; General; Amendment 2 More |
| IEC 60747-5-1 Edition 1.2 | 2002-05 | Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices; General More |
| IEC 60747-5-2 | 1997-09 | Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics More |
| IEC 60747-5-2 AMD 1 | 2002-03 | Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices; Essential ratings and characteristics; Amendment 2 More |
| IEC 60747-5-2 Edition 1.1 | 2009-11 | Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics More |
| IEC 60747-5-3 | 1997-08 | Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods More |
| IEC 60747-5-3 AMD 1 | 2002-03 | Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices; Measuring methods; Amendment 1 More |
| IEC 60747-5-3 Edition 1.1 | 2009-11 | Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods More |
| IEC 60747-6-3 ; QC 750113:1993-11 | 1993-11 | Semiconductor devices; discrete devices; part 6: thyristors: section 3: blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A More |
| IEC 60747-7 | 2010-12 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors More |
