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DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE

DIN EN 61747-10-1 [CURRENT] references following documents:

Document number Edition Title
IEC 60747-6-3 ; QC 750113:1993-11 1993-11 Semiconductor devices; discrete devices; part 6: thyristors: section 3: blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A More 
IEC 60747-7 2010-12 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors More 
IEC 60747-8 2010-12 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors More 
IEC 60747-8-2 ; QC 750106:1993-02 1993-02 Semicoductor devices; discrete devices; part 8: field-effect transistors; section 2: blank detail specification for field-effect transistors for case-rated power amplifier applications More 
IEC 60747-8-3 ; QC 750114:1995-04 1995-04 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field-effect transistors for switching applications More 
IEC 60747-8-4 2004-09 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications More 
IEC 60748-1 2002-05 Semiconductor devices - Integrated circuits - Part 1: General More 
IEC 60748-11 ; QC 790100:1990-12 1990-12 Semiconductor devices; integrated circuits; part 11: sectional specification for semiconductor integrated circuits excluding hybrid circuits More 
IEC 60748-11 AMD 1 ; QC 790100:1995-06 1995-06 Semiconductor devices - Integrated circuits - Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits; Amendment 1 More 
IEC 60748-11 AMD 2 ; QC 790100:1999-04 1999-04 Semiconductor devices - Integrated circuits - Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits; Amendment 2 More